- 您现在的位置：买卖IC网 > Sheet目录342 > MCP14700T-E/MF (Microchip Technology)IC MOSFET DRIVER HIGH/LOW 8DFN
MCP14700
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1 .
TABLE 3-1:
PIN FUNCTION TABLE
MCP14700
Symbol
Description
3x3 DFN
SOIC
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
—
PHASE
PWM HI
PWM LO
GND
LOWDR
V CC
BOOT
HIGHDR
EP
Switch Node
High-Side PWM Control Input Signal
Low-Side PWM Control Input Signal
Ground
Low-side Gate Drive
Supply Input Voltage
Floating Bootstrap Supply
High-Side Gate Drive
Exposed Metal Pad
3.1
Switch Node (PHASE)
3.6
Supply Input Voltage (V CC )
The PHASE pin provides a return path for the high-side
gate driver. The source of the high-side and the drain of
the low-side power MOSFETs are connected to this
pin.
The V CC pin provides bias to the MCP14700 device. A
bypass capacitor is to be placed between this pin and
the GND pin. This capacitor should be placed as close
to the MCP14700 as possible.
3.2
High-Side PWM Control Input
3.7
Floating Bootstrap Supply (BOOT)
Signal (PWM HI )
The PWM input signal to control the high-side power
MOSFET is applied to the PWM HI pin. A logic high on
the PWM HI pin causes the HIGHDR pin to also
transition high.
The BOOT pin is the floating bootstrap supply pin for
the high-side gate drive. A capacitor is connected
between this pin and the PHASE pin to provide the
necessary charge to turn on the high-side power
MOSFET.
3.3
Low-Side PWM Control Input
3.8
High-Side Gate Drive (HIGHDR)
Signal (PWM LO )
The PWM input signal to control the low-side power
MOSFET is applied to the PWM LO pin. A logic high on
The HIGHDR pin provides the gate drive signal to
control the high-side power MOSFET. The gate of the
high-side power MOSFET is connected to this pin.
the PWM LO pin causes the LOWDR pin to also
transition high.
3.9
Exposed Metal Pad (EP)
3.4
Ground (GND)
The exposed metal pad of the DFN package is not
internally connected to any potential. Therefore, this
The GND pin provides ground for the MCP14700
circuitry. It should have a low-impedance connection to
the bias supply source return. High peak currents will
flow out the GND pin when the low-side power
MOSFET is being turned off.
pad can be connected to a ground plane or other
copper plane on a printed circuit board to aid in heat
removal from the package.
3.5
Low-side Gate Drive (LOWDR)
The LOWDR pin provides the gate drive signal to
control the low-side power MOSFET. The gate of the
low-side power MOSFET is connected to this pin.
? 2009 Microchip Technology Inc.
DS22201A-page 9
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MCP14E3T-E/MF
IC MOSFET DVR 4.0A DUAL 8DFN
MCP14E6T-E/MF
IC MOSFET DRIVER 2A 8DFN-S
MCP14E9T-E/MF
IC MOSFET DRIVER 3A 8DFN-S
MCP1640RD-4ABC
BOARD REF DES AAAA BAT BOOST
MCP3906AT-E/SS
IC ENERGY METERING 24SSOP
MCP3907T-I/SS
IC ENERGY METER W/OSC 24SSOP
MCZ33198EF
IC TMOS DRIVER AUTO HISIDE 8SOIC
MCZ33285EFR2
IC TMOS DRIVER DUAL HISIDE 8SOIC
相关代理商/技术参数
MCP14700T-E/SN
功能描述:功率驱动器IC 4A Hi-Side MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MCP14E10
制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:3.0A Dual High-Speed Power MOSFET Driver With Enable
MCP14E10-E/MF
功能描述:功率驱动器IC 2A MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MCP14E10-E/MF
制造商:Microchip Technology Inc 功能描述:; Peak Reflow Compatible (260 C):Yes; Le
MCP14E10-E/P
功能描述:功率驱动器IC 2A MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MCP14E10-E/P
制造商:Microchip Technology Inc 功能描述:; Peak Reflow Compatible (260 C):Yes; Le 制造商:Microchip Technology Inc 功能描述:IC, MOSFET DRVR, DIP-8
MCP14E10-E/SN
功能描述:功率驱动器IC 2A MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MCP14E10-E/SN
制造商:Microchip Technology Inc 功能描述:; Peak Reflow Compatible (260 C):Yes; Le 制造商:Microchip Technology Inc 功能描述:IC, MOSFET DRVR, SOIC-8